Advanced Nanoelectronics

9	Graphene Nanoribbon Transistor Model Additional Concepts Mahdiar Ghadiry, Mahdieh Nadi, and Asrulnizam Abd Manaf

CONTENTS

9.1      Introduction

9.2      Saturation Region Modeling of Graphene Nanoribbon Transistors

9.2.1    Simulation Results and Discussion

9.3      One-Dimensional Model for Saturation Region of Double-Gate GNR Transistor

9.3.1    Simulation Results and Discussion

9.4      Two-Dimensional Model for Saturation Region of Double-Gate GNR Transistor

9.4.1    Simulation Results and Discussion

9.5      Summary

References

9.1      INTRODUCTION

Moore’s law has been predicted as the trend for silicon technology over the last four decades [1]. Along the way, it has provided the fundamental complementary metal–oxide–semiconductor ...