Advanced Nanoelectronics

13	Quantum Mechanical Effects in Nanometer Scale Strained Si/Si1−xGex MOSFETs Kang Eng Siew and Razali Ismail

CONTENTS

13.1    Introduction

13.2    Physical Properties of Bulk Si and Ge

13.3    Physics of Strained MOSFETs

13.3.1  Band Alignment in Compressive Strained Si_1−xGe_x on Relaxed Si

13.3.2  Band Alignment in Tensile Strained Si on Relaxed Si_1−xGe_x

13.4    Hole/Electron Mobility

13.4.1  Hole Mobility in Compressive Strained Si_1−xGe_x

13.4.2  Electron Mobility in Tensile Strained Si

13.5    Advances in Strained Si/SiGe MOSFETs Technology

13.6    Quantum Mechanics Approach

13.7    Quantum-Based Threshold Voltage Model in Strained Si

13.7.1  Formulation of Surface Potential

13.7.2  Formulation of Threshold Voltage

13.8    Conclusion