Nanowire phase change memory (PCM) technologies: properties and performance
M. Longo, National Research Council, Italy
Abstract:
This chapter reviews key properties of nanowire (NW) phase change materials and how they affect device performance and reliability. Crystallization kinetics, phase transitions, thermal and electrical properties, as well as the properties of core-shell structures, are discussed. Size effects are considered, particularly in relation to scaling parameters, reduction of programming energy and drift resistance, since such effects can provide useful and sometimes unexpected properties with respect to other phase change memory (PCM) devices. A comparative analysis among high performing NW devices in terms of threshold ...
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