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Modeling of resistive random access memory (RRAM) switching mechanisms and memory structures

K. Kamiya,    Kanagawa Institute of Technology, Japan

M.Y. Yang,    University of Tsukuba, Japan

B. Magyari-Köpe and Y. Nishi,    Stanford University, USA

K. Shiraishi,    Nagoya University, Japan

Abstract:

This chapter discusses ab initio modeling of resistive random access memories (RRAMs), based on density functional theory (DFT) for investigation of the switching mechanisms and to enable us to propose desirable memory structures. The chapter focuses on electronic roles in filamentary-type switching of binary oxide-based RRAMs (OxRRAMs). It first reviews DFT-based ab initio methodologies from the viewpoint of OxRRAM modeling and then goes on to discuss ...

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