Conductive bridge random access memory (CBRAM) technology

J.R. Jameson and M. Van Buskirk,    Adesto Technologies Corporation, USA


How an emerging non-volatile memory fits into today’s landscape of existing memory technologies will depend on its performance, and this will partly depend on the physics governing the operation of an individual cell. We discuss the operating physics of the prototypical conductive-bridge random access memory (CBRAM) cell in analogy with the physical characteristics of atomic wires (i.e. quantum point contacts). The fundamental origin of key performance characteristics is highlighted and fit into the landscape of technological challenges and market opportunities laid out at the beginning of the chapter. ...

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