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Nano-electromechanical random access memory (RAM) devices

W. Kwon,    University of California Berkeley, USA

Abstract:

Historically, our society requires computational memory media to support the development of our civilization. It is likely that our society will keep demanding larger capacity memory. However, conventional memory technologies are facing many challenges such as difficulties of miniaturization and guarantee of good reliability. Therefore, alternative memory device designs are proposed to overcome these challenges. As a new concept of non-volatile memory technology, a nano-electro-mechanical (NEM) diode non-volatile memory cell design is proposed. This design eliminates the need of a selector device to form a cross-point array, ...

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