Ferroelectric random access memory (FRAM) devices
T. Eshita and T. Tamura, Fujitsu Semiconductor Ltd, Japan
Y. Arimoto, Fujitsu Laboratories Ltd, Japan
We review the history of, and recent advances in, ferroelectric memory, including ferroelectric random access memory (FRAM or FeRAM). FRAM is the first among advanced non-volatile memories, such as magnetoresistive random-access memory (MRAM), phase-change random access memory (PRAM) and resistive random access memory (ReRAM), to be commercialized. Highly reliable FRAM with a memory density of a few Mb is currently available. Since FRAM has excellent electric properties, such as a high speed read/write (< 50 ns), high switching endurance ( 1013) and low power consumption, it has ...