Spin-transfer-torque magnetoresistive random access memory (STT-MRAM) technology

H. Ohno, T. Endoh, T. Hanyu, Y. Ando and S. Ikeda,    Tohoku University, Japan


This chapter deals with magnetoresistive random access memory (MRAM) technology based on spin-transfer torque (STT) and the prospect of new directions in very-large-scale integrated circuits (VLSIs) made possible by the technology. Current materials and device technology using STT are first reviewed, with emphasis on magnetic tunnel junctions (MTJs) having perpendicular easy axis for magnetization. Then, STT-MRAM realizations based on the MTJ technology are explained; one for high density and the other for high speed, aiming at non-volatile main memory and high speed storage, ...

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