Programming pulse generators for flash memories is discussed.
Recently introduced “flash” memories add electrical chip-erasure and reprogramming to established EPROM technology. These features make them a cost-effective and reliable alternative for updatable non-volatile memory. Utilizing the electrical program-erase capability requires linear circuitry techniques. The Intel 28F256 flash memory, built on the ETOX process, specifies programming operation with 12V or 12.75V (faster erase/program times) amplitude pulses. These “VPP” amplitudes must fall within 1.6%, and excursions beyond 14.0V will damage the device. ...