Intel flash memory specifies programming operation with 12V amplitude pulses. Providing these Vpp pulses requires generating and controlling high voltages within tightly specified limits to avoid damaging the device. The LT1109 switching regulator is described, which achieves these requirements.
“Flash” type memories add electrical chip-erasure and reprogramming to established EPROM technology. These features make them a cost effective and reliable alternative for updatable non-volatile memory. Utilizing the electrical program-erase capability requires linear circuitry techniques. Intel ...