Book description
This volume is devoted to the consideration of the use use of surface, thin film and interface characterization tools in support of silicon-based semiconductor processing. The approach taken is to consider each of the types of films used in silicon devices individually in its own chapter and to discuss typical problems seen throughout that films' history, including characterization tools which are most effectively used to clarifying and solving those problems.
Table of contents
- Front Cover
- Characterization in Silicon Processing
- Copyright page
- Table of Contents
- Preface to Series
- Preface
- Contributors
-
CHAPTER 1. APPLICATION OF MATERIALS CHARACTERIZATION TECHNIQUES TO SILICON EPITAXIAL GROWTH
- 1.1 Introduction
- 1.2 Silicon Epitaxial Growth
- 1.3 Film and Process Characterization (1/2)
- 1.3 Film and Process Characterization (2/2)
- 1.4 Selective Growth
- 1.5 Si1 – xGex Epitaxial Growth
- 1.6 Si 1 – xGex Material Characterization (1/2)
- 1.6 Si 1 – xGex Material Characterization (2/2)
- 1.7 Summary
- Acknowledgments
- References
- CHAPTER 2. POLYSILICON CONDUCTORS
-
CHAPTER 3. SILICIDES
- 3.1 Introduction
- 3.2 Formation of Suicides (1/4)
- 3.2 Formation of Suicides (2/4)
- 3.2 Formation of Suicides (3/4)
- 3.2 Formation of Suicides (4/4)
- 3.3 The Silicide–Silicon Interface (1/2)
- 3.3 The Silicide–Silicon Interface (2/2)
- 3.4 Oxidation of Silicides
- 3.5 Dopant Redistribution During Silicide Formation
- 3.6 Stress in Silicides
- 3.7 Stability of Silicides
- 3.8 Summary
- References
- CHAPTER 4. ALUMINUM- AND COPPER-BASED CONDUCTORS
- CHAPTER 5. TUNGSTEN-BASED CONDUCTORS
- CHAPTER 6. BARRIER FILMS
-
APPENDIX: TECHNIQUE SUMMARIES
- 1 Auger Electron Spectroscopy (AES)
- 2 Ballistic Electron Emission Microscopy (BEEM) (1/2)
- 2 Ballistic Electron Emission Microscopy (BEEM) (2/2)
- 3 Capacitance–Voltage (C–V) Measurements
- 4 Deep Level Transient Spectroscopy (DLTS)
- 5 Dynamic Secondary Ion Mass Spectrometry (Dynamic SIMS)
- 6 Electron Beam Induced Current (EBIC) Microscopy (1/2)
- 6 Electron Beam Induced Current (EBIC) Microscopy (2/2)
- 7 Energy-Dispersive X-Ray Spectroscopy (EDS)
- 8 Focused Ion Beams (FIBs)
- 9 Fourier Transform Infrared Spectroscopy (FTIR)
- 10 Hall Effect Resistivity Measurements
- 11 Inductively Coupled Plasma Mass Spectrometry (ICPMS)
- 12 Light Microscopy
- 13 Low-Energy Electron Diffraction (LEED)
- 14 Neutron Activation Analysis (NAA)
- 15 Optical Scatterometry
- 16 Photoluminescence (PL)
- 17 Raman Spectroscopy
- 18 Reflection High-Energy Electron Diffraction (RHEED)
- 19 Rutherford Backscattering Spectrometry (RBS)
- 20 Scanning Electron Microscopy (SEM)
- 21 Scanning Transmission Electron Microscopy (STEM)
- 22 Scanning Tunneling Microscopy and Scanning Force Microscopy (STM and SFM)
- 23 Sheet Resistance and the Four Point Probe (1/2)
- 23 Sheet Resistance and the Four Point Probe (2/2)
- 24 Spreading Resistance Analysis (SRA) (1/2)
- 24 Spreading Resistance Analysis (SRA) (2/2)
- 25 Static Secondary Ion Mass Spectrometry (Static SIMS)
- 26 Surface Roughness: Measurement, Formation by Sputtering, Impact on Depth Profiling
- 27 Total Reflection X-Ray Fluorescence Analysis (TXRF)
- 28 Transmission Electron Microscopy (TEM)
- 29 Variable-Angle Spectroscopic Ellipsometry (VASE)
- 30 X-Ray Diffraction (XRD)
- 31 X-Ray Fluorescence (XRF)
- 32 X-Ray Photoelectron Spectroscopy (XPS)
- Index (1/2)
- Index (2/2)
Product information
- Title: Characterization in Silicon Processing
- Author(s):
- Release date: October 2013
- Publisher(s): Newnes
- ISBN: 9780080523422
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