Characterization in Silicon Processing

Characterization in Silicon Processing

by Yale Strausser
Released October 2013
Publisher(s): Newnes
ISBN: 9780080523422

Read it now on the O’Reilly learning platform with a 10-day free trial.

O’Reilly members get unlimited access to live online training experiences, plus books, videos, and digital content from O’Reilly and nearly 200 trusted publishing partners.

Start your free trial

Book description

This volume is devoted to the consideration of the use use of surface, thin film and interface characterization tools in support of silicon-based semiconductor processing. The approach taken is to consider each of the types of films used in silicon devices individually in its own chapter and to discuss typical problems seen throughout that films' history, including characterization tools which are most effectively used to clarifying and solving those problems.

Table of contents

  1. Front Cover
  2. Characterization in Silicon Processing
  3. Copyright page
  4. Table of Contents
  5. Preface to Series
  6. Preface
  7. Contributors
  8. CHAPTER 1. APPLICATION OF MATERIALS CHARACTERIZATION TECHNIQUES TO SILICON EPITAXIAL GROWTH
    1. 1.1 Introduction
    2. 1.2 Silicon Epitaxial Growth
    3. 1.3 Film and Process Characterization (1/2)
    4. 1.3 Film and Process Characterization (2/2)
    5. 1.4 Selective Growth
    6. 1.5 Si1 – xGex Epitaxial Growth
    7. 1.6 Si 1 – xGex Material Characterization (1/2)
    8. 1.6 Si 1 – xGex Material Characterization (2/2)
    9. 1.7 Summary
    10. Acknowledgments
    11. References
  9. CHAPTER 2. POLYSILICON CONDUCTORS
    1. 2.1 Introduction
    2. 2.2 Deposition (1/3)
    3. 2.2 Deposition (2/3)
    4. 2.2 Deposition (3/3)
    5. 2.3 Doping
    6. 2.4 Patterning
    7. 2.5 Subsequent Processing
    8. References
  10. CHAPTER 3. SILICIDES
    1. 3.1 Introduction
    2. 3.2 Formation of Suicides (1/4)
    3. 3.2 Formation of Suicides (2/4)
    4. 3.2 Formation of Suicides (3/4)
    5. 3.2 Formation of Suicides (4/4)
    6. 3.3 The Silicide–Silicon Interface (1/2)
    7. 3.3 The Silicide–Silicon Interface (2/2)
    8. 3.4 Oxidation of Silicides
    9. 3.5 Dopant Redistribution During Silicide Formation
    10. 3.6 Stress in Silicides
    11. 3.7 Stability of Silicides
    12. 3.8 Summary
    13. References
  11. CHAPTER 4. ALUMINUM- AND COPPER-BASED CONDUCTORS
    1. 4.1 Introduction
    2. 4.2 Film Deposition (1/2)
    3. 4.2 Film Deposition (2/2)
    4. 4.3 Film Growth (1/2)
    5. 4.3 Film Growth (2/2)
    6. 4.4 Encapsulation
    7. 4.5 Reliability Concerns (1/2)
    8. 4.5 Reliability Concerns (2/2)
    9. References
  12. CHAPTER 5. TUNGSTEN-BASED CONDUCTORS
    1. 5.1 Applications for ULSI Processing
    2. 5.2 Deposition Principles
    3. 5.3 Blanket Tungsten Deposition
    4. 5.4 Selective Tungsten Deposition (1/2)
    5. 5.4 Selective Tungsten Deposition (2/2)
    6. References
  13. CHAPTER 6. BARRIER FILMS
    1. 6.1 Introduction
    2. 6.2 Characteristics of Barrier Films
    3. 6.3 Types of Barrier Films
    4. 6.4 Processing Barrier Films
    5. 6.5 Examples of Barrier Films (1/4)
    6. 6.5 Examples of Barrier Films (2/4)
    7. 6.5 Examples of Barrier Films (3/4)
    8. 6.5 Examples of Barrier Films (4/4)
    9. 6.6 Summary
    10. Acknowledgments
    11. References
  14. APPENDIX: TECHNIQUE SUMMARIES
    1. 1 Auger Electron Spectroscopy (AES)
    2. 2 Ballistic Electron Emission Microscopy (BEEM) (1/2)
    3. 2 Ballistic Electron Emission Microscopy (BEEM) (2/2)
    4. 3 Capacitance–Voltage (C–V) Measurements
    5. 4 Deep Level Transient Spectroscopy (DLTS)
    6. 5 Dynamic Secondary Ion Mass Spectrometry (Dynamic SIMS)
    7. 6 Electron Beam Induced Current (EBIC) Microscopy (1/2)
    8. 6 Electron Beam Induced Current (EBIC) Microscopy (2/2)
    9. 7 Energy-Dispersive X-Ray Spectroscopy (EDS)
    10. 8 Focused Ion Beams (FIBs)
    11. 9 Fourier Transform Infrared Spectroscopy (FTIR)
    12. 10 Hall Effect Resistivity Measurements
    13. 11 Inductively Coupled Plasma Mass Spectrometry (ICPMS)
    14. 12 Light Microscopy
    15. 13 Low-Energy Electron Diffraction (LEED)
    16. 14 Neutron Activation Analysis (NAA)
    17. 15 Optical Scatterometry
    18. 16 Photoluminescence (PL)
    19. 17 Raman Spectroscopy
    20. 18 Reflection High-Energy Electron Diffraction (RHEED)
    21. 19 Rutherford Backscattering Spectrometry (RBS)
    22. 20 Scanning Electron Microscopy (SEM)
    23. 21 Scanning Transmission Electron Microscopy (STEM)
    24. 22 Scanning Tunneling Microscopy and Scanning Force Microscopy (STM and SFM)
    25. 23 Sheet Resistance and the Four Point Probe (1/2)
    26. 23 Sheet Resistance and the Four Point Probe (2/2)
    27. 24 Spreading Resistance Analysis (SRA) (1/2)
    28. 24 Spreading Resistance Analysis (SRA) (2/2)
    29. 25 Static Secondary Ion Mass Spectrometry (Static SIMS)
    30. 26 Surface Roughness: Measurement, Formation by Sputtering, Impact on Depth Profiling
    31. 27 Total Reflection X-Ray Fluorescence Analysis (TXRF)
    32. 28 Transmission Electron Microscopy (TEM)
    33. 29 Variable-Angle Spectroscopic Ellipsometry (VASE)
    34. 30 X-Ray Diffraction (XRD)
    35. 31 X-Ray Fluorescence (XRF)
    36. 32 X-Ray Photoelectron Spectroscopy (XPS)
  15. Index (1/2)
  16. Index (2/2)

Product information

  • Title: Characterization in Silicon Processing
  • Author(s): Yale Strausser
  • Release date: October 2013
  • Publisher(s): Newnes
  • ISBN: 9780080523422