NOMENCLATURE
SoC | System-On-Chip |
ATE | Automatic test equipment |
J | Joule |
Col | Coulomb |
K | Kelvin |
°C | degree Celsius |
VT | Thermal voltage, kT/q |
VDD | Positive supply voltage |
VSS | Negative supply voltage |
BJT | Bipolar Junction Transistor |
IB | Base Current of Bipolar Transistor |
IC | Collector Current of Bipolar Transistor |
IE | Emitter Current of Bipolar Transistor |
IS | Saturation Current of Bipolar Transistor |
JC | Collector Current Density of Bipolar Transistor |
JS | Saturation Current Density of Bipolar Transistor |
VBE | Base-Emitter Voltage of a BJT |
VCE | Collector-Emitter Voltage of a BJT |
RB | Zero-bias base ohmic resistance |
RE | Emitter resistance |
RC | Collector resistance |
VG0 | Silicon Bandgap Voltage Extrapolated at 0 K |
AE | Emitter Area of Bipolar Transistor |
WB | BJT base width |
β | Forward current gain |
VD | Forward-bias diode voltage |
MOSFET | Metal Oxide Semiconductor Field Effect Transistor |
NMOS | N-Channel MOSFET |
PMOS | P-Channel MOSFET |
CMOS | Complementary Metal Oxide Semiconductor |
W | MOSFET Gate Width |
L | MOSFET Gate Length |
S | Channel Width to Length Ratio (W/L) of a MOSFET |
IDS | Drain to Source Current of a MOSFET |
ID,sub | Drain to Source Current of a MOSFET biased in subthreshold mode |
ID,lin | Drain to Source Current of a MOSFET biased in triode mode |
ID,sat | Drain to Source Current of a MOSFET biased in saturation mode |
ID,leak | Drain to Source Leakage Current or Off Current of a MOSFET in cutoff mode |
Îleak | Unit Drain to Source Current Normalized by S |
ζ |
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