Compact Models for Integrated Circuit Design

8

Modeling Process Variability in Scaled MOSFETs

8.1    Introduction

This chapter presents compact MOSFET (metal-oxide-semiconductor field-effect transistor) modeling approaches for process variability-aware VLSI (very-large-scale-integrated) circuit CAD. The circuit design for advanced VLSI technology is severely constrained by random and systematic process variability [1]. With continued miniaturization of MOSFET devices [2, 3, 4, 5, 6, 7, 8], performance variability induced by process variability has become a critical issue in the design of VLSI circuits using advanced CMOS (complementary metal-oxide-semiconductor) technologies. Process variability in scaled CMOS technologies severely impacts the delay and power variability in VLSI devices, ...