Beyond-CMOS Transistor Models: Tunnel FETs
As the CMOS (complementary metal-oxide-semiconductor) technology approaches its ultimate scaling limit of MOSFET (metal-oxide-semiconductor field-effect transistors) device miniaturization, extensive global search for beyond-CMOS devices has been continued to rebooting computing. This new device technology must be green (i.e., energy efficient) and continue to increase packing density of devices as well as device functionalities in an IC (integrated circuit) chip in the same rate as the CMOS technology. A number of potential beyond-CMOS devices involving present as well as new state variables and communication frameworks have been reported [1, 2, 3]. Among the potential beyond-CMOS ...
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