Compact MOSFET Models for VLSI Design

List of Symbols

Physical Constants

∈0 = 8.854 × 10−14 F cm−1	Permittivity of free space
∈Si = 11.7∈0	Permittivity of Si
∈ox = 3.97∈0	Permittivity of SiO2
q = 1.6 × 10−19 C	Electron charge
k = 1.38 × 10−23 JK−1	Boltzmann's constant
h = 6.63 × 10−34 J sec	Planck's constant
m = 9.1 × 10−31 kg	Free electron mass

Select Parameter Values for Silicon

= 0.33 (relative to unity)	Effective mass of electron
= 0.55 (relative to unity)	Effective mass of hole
Values at a temperature of 300 K
ni = 1.4 × 1010 cm−3	Intrinsic carrier concentration
μn = 1400 cm2 V−1 s−1	Electron mobility in bulk silicon
μp = 500 cm2 V−1 s−1	Hole mobility in bulk silicon
υsat,n = 8.5 × 106 cm s−1	Saturation velocity for electrons
υsat,p = 5.0 × 106 cm s−1	Saturation velocity for holes
Fc,n = 2.5 × 103 V cm−1	Critical electric field for electron saturation velocity
Fc,p = 2.5 × 103 V cm−1	Critical electric field for hole saturation velocity

Dimensions

LG	Mask defined gate length
L = LG − 2LD	Channel length
LD	Length of lateral diffusion from source/drain under the gate
Le	Corrected channel length in saturation
L(S, D)	Length of source, drain diffusion region in the direction of channel
Lb	Debye length
Δ L	Length of pinched-off/high field region near drain
L