Effect of Lattice Imperfections on Electrical Resistivity of Nanomaterials
Abstract
In this chapter the influence of lattice defects (vacancies, vacancy clusters, dislocations, planar faults, and grain boundaries) on the electrical resistivity of ultrafine-grained (UFG) and nanocrystalline materials is overviewed. First, the residual resistivities caused by different defects are compared with the intrinsic resistivity at different temperatures. It turned out that the resistivities of vacancies, dislocations, and twin faults are much smaller than that for high-angle grain boundaries (HAGBs), solute atoms, and the intrinsic resistivity at room temperature. For pure metals and equilibrium solid solutions, nanocrystallization by severe plastic ...
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