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Design of CMOS Millimeter-Wave and Terahertz Integrated Circuits with Metamaterials by Yang Shang, Hao Yu

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230 Design of CMOS Millimeter-Wave and Terahertz Integrated Circuits
Table 9.2: Performance Comparison of State-of-the-Art Oscillator
Designs around 100 GHz
Parameters
[247] [248] [249] This Work
Oscillator Design
SWO LC-tank LC-tank DTL-CSRR
f
osc
(GHz)
104 128 100 96
Power Supply (V)
1.48 1.2 1 1.2
Power
core
(mW)
25.3 9 30 7.5
Phase Noise @10-MHz
offset (dBc/Hz)
-105 -105 -85 -111.5
FOM (dBc/Hz)
-171.3 -177.6 -150.2 -182.4
Technology
130-nm
CMOS
90-nm
CMOS
90-nm
CMOS
65-nm
CMOS
As described in Table 9.2, the measurement results of the proposed 96-GHz
oscillator by DTL-CSRR resonator s how state-of-the-art performance whe n
compared to the recent oscillators designed at 100 GHz using the traditional
on-chip LC-tank resonators. Clearly, the proposed high-Q metamaterial res-
onator structure shows the best phase noise result of -111.5 dBc/Hz at 10-MHz
offset and FOM of -182.4 dBc /Hz at 96 GHz. As a summary, when compared
to the existing designs by LC-tank or standing-wave resonator-based oscillator
[247, 248, 2 49], the phase noise and FOM are improved by 13 dB and 16 dB
on average, respectively.
9.5 Conclusion
High-Q oscillation can be achieved by metamaterial resonators such as DTL-
SRR and DTL-CSSR. As demonstrated in this section, Both DTL-SRR and
DTL-CSSR can be applied in the oscillator design with low phase noise, low
power, and compact chip. The 76GHz oscillator by the DTL-SRR is fabricated
with a compact area of 0.06mm
2
and measured with -108.8 dBc/Hz phase noise
at 10MHz offset, -182.1 dBc/Hz FOM and 2.7mW core power co nsumption.
The 96GHz oscillator by the DTL-CSRR is fabricated with a compact area
of 0.14mm
2
and measured with -111.5 dBc/Hz phase noise at 10MHz offset,
-182.4 dBc/Hz FOM and 6.24mW cor e power consumption. Both oscillators
have 46dB better phase noise than that of the sta nding-wave oscillator by a
CPS with similar operating frequencies.

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