Brush Scrubbing for Post-CMP Cleaning
Ting Sun1, Zhenxing Han2 and Manish Keswani3, 1Sichuan Normal University, Chengdu, Sichuan, China, 2Micron Technology Inc., Boise, ID, United States, 3University of Arizona, Tucson, AZ, United States
Abstract
To achieve a defect-free wafer surface, slurry residuals and other contaminants are required to be removed after a chemical mechanical planarization (CMP) process. Brush scrubbing, a process based on direct contact between a soft polyvinyl alcohol (PVA) brush and the wafer surface is widely accepted in post-CMP cleaning due to process flexibility, single-wafer processing configuration, and reduced cost of ownership. Researches have shown that the cleaning performance of the brush scrubbing ...
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