Electromigration in Thin Films and Electronic Devices

1

Modeling of electromigration phenomena

F. Cacho and X. Federspiel,     STMicroelectronics, France

Abstract:

From early Black’s law to modern technology computer-aided design (TCAD) solutions, this chapter highlights the different strategies of electromigration modeling. Firstly, vacancy transport equations are discussed and applications to interconnect failure mode are described. Then, the simulation of void shape evolution during electromigration is presented and various numerical methods are compared and illustrated.

Key words

electromigration modeling

Black’s law

void shape evolution

1.1 Introduction

Electromigration is a mass transport process operating in metal films stressed under electrical current. The atomic transport is a ...