Electronic Circuits with MATLAB, PSpice, and Smith Chart
by Won Y. Yang, Jaekwon Kim, Kyung W. Park, Donghyun Baek, Sungjoon Lim, Jingon Joung, Suhyun Park, Han L. Lee, Woo June Choi, Taeho Im
4FET Circuits
4.1 Field‐Effect Transistor (FET)
As the Bipolar Junction Transistor (BJT) with three terminals, each called the base B, collector C, and emitter E, the Field‐Effect Transistor (FET) is also a semiconductor device with three terminals, each called the gate G, drain D, and source S. In contrast with the BJT that operates with both types of charge carriers, holes and electrons, the FET is a ‘unipolar’ device that works with only one type of carriers, holes or electrons. While the BJT can basically be modeled as a current‐controlled current source (in the forward‐active region) since its collector current iC depends on its base current iB, the FET can basically be modeled as a voltage(field)‐controlled current source (in the saturation region) since its ...
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