Acronyms
| 1D1R | 1-Diode-1-resistor |
| 1S1R | 1-Selector-1-resistor |
| 1T | One transistor |
| 1T1C | 1-Transistor-1-capacitor |
| 1T1R | 1-Transistor-1-resistor |
| 2DEG | Two-dimensional electron gas |
| 3D | Three dimensional |
| AD | Analog digital |
| AF | Anti-ferromagnetic |
| AIST | Silver (Ag) Indium (In) Antimony (Sb) Tellurium (Te) |
| ALD | Atomic layer deposition |
| AM | Associative memory |
| ASIC | Application specific integrated circuit |
| ASL | All-spin logic |
| BARITT diode | Barrier-injection transit-time diode |
| BBE | Brain, body, environment based interactions |
| BBL | Buried bit line |
| BDA | 1,4-Benzenediamine |
| BDC60 | Bis(fullero[c]pyrolidin-1y1)benzene |
| BDT | 1,4-Benzenedithiol |
| BE | Bottom electrode |
| BEC | Bottom electrode contact |
| BEOL | Back end of line |
| BFO | Bismuth ferrite (BiFeO3) |
| BiSFET | Bilayer pseudo-spin field-effect transistor |
| BIST | Built-in self-test |
| BJT | Bipolar junction transistor |
| BL | Bit line |
| BLG | Bilayer graphene |
| BN | Beyond Neumann |
| CA | Cellular automata |
| CAM | Contend addressable memory |
| CBL | Cantilever bit line |
| CBRAM | Conductive-bridge random access memory |
| CDMA | Code division multiple access |
| CMIS | Current-induced magnetization switching |
| CMOS | Complementary metal oxide semiconductor |
| CNT | Carbon nanotube |
| CNTFET | Carbon nanotube field-effect transistor |
| CO | Carbon monoxide |
| CoFeB | Cobalt iron boron |
| CoPt | Cobalt platinum |
| CP-AFM | Conducting probe–atomic force microscopy |
| CPP | Current perpendicular to plane |
| CPU | Central processing unit |
| CRS | Complementary resistive switch |
| CTAFM | Conductive-tip ... |
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