O'Reilly logo

Stay ahead with the world's most comprehensive technology and business learning platform.

With Safari, you learn the way you learn best. Get unlimited access to videos, live online training, learning paths, books, tutorials, and more.

Start Free Trial

No credit card required

Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications

Book Description

A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications

Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are:

  • A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques.

  • Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors.

  • A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources.

  • Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors.

  • Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development.

  • This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

    Table of Contents

    1. Cover
    2. Title Page
    3. Copyright
    4. About the Authors
    5. Preface
    6. Chapter 1: Introduction
      1. 1.1 Progress in Electronics
      2. 1.2 Features and Brief History of Silicon Carbide
      3. 1.3 Outline of This Book
      4. References
    7. Chapter 2: Physical Properties of Silicon Carbide
      1. 2.1 Crystal Structure
      2. 2.2 Electrical and Optical Properties
      3. 2.3 Thermal and Mechanical Properties
      4. 2.4 Summary
      5. References
    8. Chapter 3: Bulk Growth of Silicon Carbide
      1. 3.1 Sublimation Growth
      2. 3.2 Polytype Control in Sublimation Growth
      3. 3.3 Defect Evolution and Reduction in Sublimation Growth
      4. 3.4 Doping Control in Sublimation Growth
      5. 3.5 High- Temperature Chemical Vapor Deposition
      6. 3.6 Solution Growth
      7. 3.7 3C-SiC Wafers Grown by Chemical Vapor Deposition
      8. 3.8 Wafering and Polishing
      9. 3.9 Summary
      10. References
    9. Chapter 4: Epitaxial Growth of Silicon Carbide
      1. 4.1 Fundamentals of SiC Homoepitaxy
      2. 4.2 Doping Control in SiC CVD
      3. 4.3 Defects in SiC Epitaxial Layers
      4. 4.4 Fast Homoepitaxy of SiC
      5. 4.5 SiC Homoepitaxy on Non-standard Planes
      6. 4.6 SiC Homoepitaxy by Other Techniques
      7. 4.7 Heteroepitaxy of 3C-SiC
      8. 4.8 Summary
      9. References
    10. Chapter 5: Characterization Techniques and Defects in Silicon Carbide
      1. 5.1 Characterization Techniques
      2. 5.2 Extended Defects in SiC
      3. 5.3 Point Defects in SiC
      4. 5.4 Summary
      5. References
    11. Chapter 6: Device Processing of Silicon Carbide
      1. 6.1 Ion Implantation
      2. 6.2 Etching
      3. 6.3 Oxidation and Oxide/SiC Interface Characteristics
      4. 6.4 Metallization
      5. 6.5 Summary
      6. References
    12. Chapter 7: Unipolar and Bipolar Power Diodes
      1. 7.1 Introduction to SiC Power Switching Devices
      2. 7.2 Schottky Barrier Diodes (SBDs)
      3. 7.3 pn and pin Junction Diodes
      4. 7.4 Junction-Barrier Schottky (JBS) and Merged pin-Schottky (MPS) Diodes
      5. References
    13. Chapter 8: Unipolar Power Switching Devices
      1. 8.1 Junction Field-Effect Transistors (JFETs)
      2. 8.2 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
      3. References
    14. Chapter 9: Bipolar Power Switching Devices
      1. 9.1 Bipolar Junction Transistors (BJTs)
      2. 9.2 Insulated-Gate Bipolar Transistors (IGBTs)
      3. 9.3 Thyristors
      4. References
    15. Chapter 10: Optimization and Comparison of Power Devices
      1. 10.1 Blocking Voltage and Edge Terminations for SiC Power Devices
      2. 10.2 Optimum Design of Unipolar Drift Regions
      3. 10.3 Comparison of Device Performance
      4. References
    16. Chapter 11: Applications of Silicon Carbide Devices in Power Systems
      1. 11.1 Introduction to Power Electronic Systems
      2. 11.2 Basic Power Converter Circuits
      3. 11.3 Power Electronics for Motor Drives
      4. 11.4 Power Electronics for Renewable Energy
      5. 11.5 Power Electronics for Switch-Mode Power Supplies
      6. 11.6 Performance Comparison of SiC and Silicon Power Devices
      7. References
    17. Chapter 12: Specialized Silicon Carbide Devices and Applications
      1. 12.1 Microwave Devices
      2. 12.2 High-Temperature Integrated Circuits
      3. 12.3 Sensors
      4. References
    18. Appendix A: Incomplete Dopant Ionization in 4H-SiC
      1. References
    19. Appendix B: Properties of the Hyperbolic Functions
    20. Appendix C: Major Physical Properties of Common SiC Polytypes
      1. C.1 Properties
      2. C.2 Temperature and/or Doping Dependence of Major Physical Properties
      3. References
    21. Index
    22. End User License Agreement