Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications

Appendix C

Major Physical Properties of Common SiC Polytypes

C.1 Properties

All measurements at room temperature if not specified otherwise. Values taken from [1–19].

Properties/polytype	3C-SiC	4H-SiC	6H-SiC
Stacking sequence	ABC	ABAC	ABCACB
Bandgap (eV)	2.36	3.26	3.02
Exciton gap (eV), 2 K	2.390	3.265	3.023
Lattice constant
(Å)	4.3596	3.0798	3.0805
(Å)	—	10.0820	15.1151
	3.21	3.21	3.21
Electron effective mass
	0.67	0.33	2.0
	0.25	0.42	0.48
Hole effective mass
		1.75	1.85
		0.66	0.66
Number of conduction band minima	3	3	6
Effective density of states in the ...