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Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications by James A. Cooper, Tsunenobu Kimoto

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Appendix C

Major Physical Properties of Common SiC Polytypes

C.1 Properties

All measurements at room temperature if not specified otherwise. Values taken from [1–19].

Properties/polytype 3C-SiC 4H-SiC 6H-SiC
Stacking sequence ABC ABAC ABCACB
Bandgap (eV) 2.36 3.26 3.02
Exciton gap (eV), 2 K 2.390 3.265 3.023
Lattice constant
b03-math-0001 (Å) 4.3596 3.0798 3.0805
b03-math-0002 (Å) 10.0820 15.1151
b03-math-0003 3.21 3.21 3.21
Electron effective mass
b03-math-0004 0.67 0.33 2.0
b03-math-0005 0.25 0.42 0.48
Hole effective mass
b03-math-0006 b03-math-0007 1.75 1.85
b03-math-0008 b03-math-0009 0.66 0.66
Number of conduction band minima 3 3 6
Effective density of states in the ...

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