November 2014
Intermediate to advanced
400 pages
21h 11m
English
Content preview from Fundamentals of Silicon Carbide Technology
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Chapter 4Epitaxial Growth of Silicon Carbide
In SiC, epitaxial growth is essential to produce active layers with designed doping density and thickness. Homoepitaxial growth technology by chemical vapor deposition has shown remarkable progress, with polytype replication and wide-range doping control achieved by using step-flow growth and controlling the C/Si ratio, respectively. In this chapter, fundamental aspects and technological developments for hexagonal SiC homoepitaxial growth are described. Heteroepitaxial growth of 3C-SiC is also briefly introduced.
4.1 Fundamentals of SiC Homoepitaxy
Chemical vapor deposition (CVD) of a hexagonal SiC polytype on off-axis 
of the identical polytype is the standard technology for SiC device development. Monosilane 
and propane 
or ethylene 
are usually employed as the precursors. The carrier gas is hydrogen 
, and argon (Ar) is sometimes added. The typical growth temperature and growth rate are 1500–1650 °C and , respectively. The CVD growth process ...
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