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Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications by James A. Cooper, Tsunenobu Kimoto

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Chapter 4Epitaxial Growth of Silicon Carbide

In SiC, epitaxial growth is essential to produce active layers with designed doping density and thickness. Homoepitaxial growth technology by chemical vapor deposition has shown remarkable progress, with polytype replication and wide-range doping control achieved by using step-flow growth and controlling the C/Si ratio, respectively. In this chapter, fundamental aspects and technological developments for hexagonal SiC homoepitaxial growth are described. Heteroepitaxial growth of 3C-SiC is also briefly introduced.

4.1 Fundamentals of SiC Homoepitaxy

Chemical vapor deposition (CVD) of a hexagonal SiC polytype on off-axis c04-math-0001 of the identical polytype is the standard technology for SiC device development. Monosilane c04-math-0002 and propane c04-math-0003 or ethylene c04-math-0004 are usually employed as the precursors. The carrier gas is hydrogen c04-math-0005, and argon (Ar) is sometimes added. The typical growth temperature and growth rate are 1500–1650 °C and , respectively. The CVD growth process ...

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