References

  1. [1] Brander, R.W. and Sutton, R.P. (1965) Solution grown SiC p-n junctions. Br. J. Appl. Phys., 2, 24.
  2. [2] Ikeda, M., Hayakawa, T., Yamagiwa, S. et al. (1980) Fabrication of 6H-SiC light-emitting diodes by a rotation dipping technique: Electroluminescence mechanisms. J. Appl. Phys., 50, 8215.
  3. [3] Jennings, V.J., Sommer, A. and Chang, H.C. (1966) The epitaxial growth of silicon carbide. J. Electrochem. Soc., 113, 728.
  4. [4] Campbell, R.B. and Chu, T.L. (1966) Epitaxial growth of silicon carbide by the thermal reduction technique. J. Electrochem. Soc., 113, 825.
  5. [5] von Muench, W. and Phaffeneder, I. (1976) Epitaxial deposition of silicon carbide from silicon tetrachloride and hexane. Thin Solid Films, 31, 39.
  6. [6] Yoshida, S., Sakuma, E., Okumura, H. et al. (1987) Heteroepitaxial growth of SiC polytypes. J. Appl. Phys., 62, 303.
  7. [7] Kuroda, N., Shibahara, K., Yoo, W.S. et al. (1987) Extended Abstract 19th Conference on Solid State Devices and Materials, Tokyo, Japan, 1987, p. 227 Step controlled VPE growth of SiC single crystals at low temperatures.
  8. [8] Ueda, T., Nishino, H. and Matsunami, H. (1990) Crystal growth of SiC by step-controlled epitaxy. J. Cryst. Growth, 104, 695.
  9. [9] Kong, H.S., Kim, H.J., Edmond, J.A. et al. (1987) Growth, doping, device development and characterization of CVD beta-SiC epilayers on Si(100) and alpha-SiC(0001). Mater. Res. Soc. Symp. Proc., 97, 233.
  10. [10] Kong, H.S., Glass, J.T. and Davis, R.F. (1988) Chemical vapor deposition and characterization ...

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