IU.NET and ARCES-DEB, University of Bologna, Bologna, Italy
IU.NET and DIEGM, University of Udine, Udine, Italy
The International Roadmap for Semiconductors has predicted that starting from the 45 nm technology node, an increase in the basic transport properties (called a “ballistic technology booster”) must be achieved to reach the target specifications of high-performance devices1. The on-current ION of the MOSFETs is limited to a maximum value IBL that is reached in the ballistic transport regime.2,3 Hence, improvements in ION demand an increase of either IBL or of the ballisticity ratio BR defined as ION/IBL, which is a metric of how close ION comes to the ballistic limit. In recent technologies, the observed BR values have not significantly improved4 and are thought to have only a modest dependence on the technology node (TN) and on the gate length LG for conventional silicon MOSFETs. Further improvements in IBL requires ultra-thin silicon-on-insulator (SOI) with silicon thickness below 10 nm or non-conventional channel compsition.5
In this chapter we extend previous analyses on the role of scattering in the channel and drain of decananometer MOSFETs and our results demonstrate that, for the explored gate lengths values LG, scattering still holds ION far below the ballistic limit.6,7
Accurate modeling of MOSFETs with LG comparable to or shorter ...