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Handbook of Cleaning for Semiconductor Manufacturing: Fundamentals and Applications

by Karen A. Reinhardt, Richard F. Reidy

January 2011

Intermediate to advanced

454 pages

20h 37m

English

Wiley

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Cover
Half Title page
Title page
Copyright page
Foreword
Introduction
Part 1: Fundamentals
Chapter 1: Surface and Colloidal Chemical Aspects of Wet Cleaning
1.1 Introduction to Surface Chemical Aspects of Cleaning1.2 Chemistry of Solid-Water Interface1.3 Particulate Contamination: Theory and Measurements1.4 Influence of Surface Electrical Charges on Metal Ion Adsorption1.5 Wettability of Surfaces1.6 High Aspect Ratio Cleaning: Narrow Structures1.7 Surface Tension Gradient: Application to Drying1.8 SummaryReferences
Chapter 2: The Chemistry of Wet Cleaning
2.1 Introduction to Aqueous Cleaning2.2 Overview of Aqueous Cleaning Processes2.3 The SC-1 Clean or APM2.4 The SC-2 clean or HPM2.5 Sulfuric Acid-Hydrogen Peroxide Mixture2.6 Hydrofluoric AcidAcknowledgmentsReferences
Chapter 3: The Chemistry of Wet Etching
3.1 Introduction and Overview3.2 Silicon Dioxide Etching3.3 Silicon Etching3.4 Silicon Nitride EtchingAcknowledgementsReferences

Chapter 4: Surface Phenomena: Rinsing and Drying
4.1 The Surface Phenomena of Rinsing and Drying4.2 Overview of Rinsing4.3 Overview of DryingAcknowledgementsReferences
Chapter 5: Fundamental Design of Chemical Formulations
5.1 Introduction and Overview5.2 Historical Development of Formulations for the Integrated Circuit Industry5.3 Mechanism of Stripping, Cleaning, and Particle Removal5.4 Components and Additives in Chemical Formulations5.5 Creating Chemical Formulations5.6 Environmental, Safety, and Health AspectsAcknowledgmentsReferences
Chapter 6: Filtering, Recirculating, Reuse, and Recycling of Chemicals
6.1 Overview of Wet Chemical Contamination Control6.2 Bulk Chemical Distribution for Wet Cleaning Tools6.3 Chemical Distribution, Filtering, and Recirculation Requirements for Wet Cleaning Tools6.4 Contamination Control Metrology6.5 Effects of Contamination6.6 Filtration6.7 Chemical Blending, Recycling, and Reuse6.8 SummaryReferences
Part 2: Applications
Chapter 7: Cleaning Challenges of High-k/Metal Gate Structures
7.1 Introduction and Overview of High-κ/Metal Gate Surface Preparation7.2 Surface Preparation and Cleaning7.3 Wet Film Removal7.4 High-κ Removal7.5 Resist Stripping and Residue RemovalAcknowledgmentsReferences
Chapter 8: High Dose Implant Stripping
8.1 Introduction and Overview of High Dose Implant Stripping8.2 High Dose Implant Cleaning and Stripping Processes8.3 Plasma Processing8.4 Wet Processing8.5 Other ProcessingAcknowledgmentsReferences
Chapter 9: Aluminum Interconnect Cleaning and Drying
9.1 Introduction to Aluminum Interconnect Cleaning9.2 Source of Post-Etch Residues Requiring Wet Cleaning9.3 Chemistry Considerations for Cleans Following Etching9.4 Rinsing/Drying and Equipment Considerations9.5 Alternative and Emerging Cleaning TechnologiesAcknowledgementsReferences
Chapter 10: Low-κ/CU Cleaning and Drying
10.1 Introduction and Overview10.2 Stripping and Post-etch Residue Removal10.3 Pore Sealing and Plasma Damage Repair10.4 Post-chemical Mechanical Polishing CleaningReferences
Chapter 11: Corrosion and Passivation of Copper
11.1 Introduction and Overview11.2 Copper Corrosion11.3 Copper Corrosion Inhibitors11.4 Copper Cleaning FormulationsAcknowledgmentsReferences
Chapter 12: Germanium Surface Conditioning and Passivation
12.1 Introduction12.2 Germanium Cleaning12.3 Surface Passivation and Gate Stack Interface PreparationReferences
Chapter 13: Wafer Reclaim
13.1 Introduction to Wafer Reclaim13.2 Introduction to Silicon Manufacturing for Semiconductor Applications13.3 Energy Requirements for Silicon Wafer Manufacturing13.4 Test Wafer Usage and Wafer Reclaim13.5 Requirements for Wafer Reclaim and Recycle13.6 Wafer Reclaim Options13.7 Types of Wafer Reclaim Processes13.8 Formulated Reclaim SolutionsAcknowledgementsReferences
Chapter 14: Direct Wafer Bonding Surface Conditioning
14.1 Introduction and Overview of Bonding14.2 Planarization and Smoothing Prior to Bonding14.3 Wet Cleaning and Surface Conditioning Processing14.4 Dry Surface Conditioning Processing14.5 Thermal Treatments and Annealing14.6 Conductive BondingReferences
Part 3: New Directions
Chapter 15: Novel Analytical Methods for Cleaning Evaluation
15.1 Introduction15.2 Novel Analytical Methods15.3 Recent Advances in Total Reflection X-ray Fluorescence Spectroscopy Analysis15.4 Advances in Vapor Phase Analysis15.5 Trace Metal Contamination on the Edge and Bevel of a Wafer15.6 Kelvin Probe Technologies15.7 Novel Applications of Electron Spectroscopy Techniques15.8 Novel X-ray Spectroscopy Techniques15.9 Electrochemical Sensors15.10 SummaryAcknowledgmentsReferences
Chapter 16: Stripping and Cleaning for Advanced Photolithography Applications
16.1 Introduction to Advance Stripping Applications16.2 Historical Background16.3 Recent Trends for Photoresist Stripping and Post-etch Residue Removal16.4 Single Wafer Tools16.5 Wetting in Small Dimensions and Cleaning Challenges16.6 Environmental Health and Safety16.7 The Future of Advanced Photoresist Stripping and CleaningAcknowledgementsReferences
Index

Content preview from Handbook of Cleaning for Semiconductor Manufacturing: Fundamentals and Applications

Chapter 5

Fundamental Design of Chemical Formulations

Robert J. Rovito1, Michael B. Korzenski2, Ping Jiang2, and Karen A. Reinhardt3

1Philadelphia, Pennsylvania, USA

2ATMI, Advanced Technology Development, Danbury, Connecticut, USA

3Cameo Consulting, San Jose, California, USA

Abstract

Chemical formulations are used because of the specific properties of the components in the mixture working in a synergistic fashion. Each component plays of role in the overall performance of the formulation. The key components for stripping and cleaning formulations are the base chemicals, additives, and in some cases, water for semi-aqueous cleaners. Design of chemical formulations according to solubility principles is used to tailor the solvents to the solute. Practical considerations are also given for designing a formulation.

Keywords: chemical formulations, solubility parameters, fluoride-based chemistry, amine-based chemistry, hydroxylamine, semi-aqueous chemistry, surfactants, passivating agents, buffering agents

5.1 Introduction and Overview

The formulations used for stripping photoresist, post-implant and post-etch residue removal (PERR), and post-CMP (chemical mechanical polishing) cleaning and particle removal have a long history. However, designing a chemical formulation to clean integrated circuit devices to accomplish the pre-set process requirements is relatively new. The semiconductor industry has borrowed knowledge from various other industries as it went through its initial growing ...

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Handbook of Cleaning for Semiconductor Manufacturing: Fundamentals and Applications

by Karen A. Reinhardt, Richard F. Reidy

Become an O’Reilly member and get unlimited access to this title plus top books and audiobooks from O’Reilly and nearly 200 top publishers, thousands of courses curated by job role, 150+ live events each month,
and much more.