Handbook of Silicon Based MEMS Materials and Technologies

Chapter Three. Properties of Silicon Crystals

Many properties of Czochralski (CZ) silicon wafers originate partially or totally from the crystal growth used to produce the single-crystalline silicon. For example, the diameter and orientation of the as-grown crystal are already close to those of the final wafers. Furthermore, the conductivity type (p or n), selection of the dopant element and its concentration (which induces certain electrical resistivity), oxygen concentration and amount of carbon, and the homogeneity of these concentrations in the microscopic and macroscopic scales all originate from the growth process. Also, other important qualities (e.g., the amount of harmful transition-metal impurities and many of the typical defects encountered ...