8.2.1. Thermal Oxidation
8.2.1.1. Thermal Oxidation Processes
When a silicon wafer experiences an oxidizing ambient at the elevated temperatures the silicon dioxide is chemically grown on the surface. The oxidizing ambient is usually steam, and the process is known as wet oxidation. If pure oxygen gas is employed, the process is called dry oxidation.
The basic oxidation kinetics has been dealt in several textbooks on silicon technology [1]. The model for oxide growth was proposed in 1965 by Deal and Grove [2]. Their model is also known as the linear–parabolic model and it remains the most important description of oxide growth. The name stems from the fact that for thin oxides the film thickness increases linearly with time, but for prolonged ...
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