8.2.2. CVD Oxide Growth Methods

In semiconductor fabrication various kinds of insulating, semiconducting, and metallic thin films are deposited on the substrates via CVD methods. Usually the CVD films are amorphous or polycrystalline. In the CVD growth the gases that contain the desired species for the film formation are reacted in the growth chamber and form the target film on the substrate. Unlike in the case of the thermal oxide, the CVD films do not usually react with substrate. Thus the film growth does not consume the substrate and the films can be deposited on several kinds of materials.

For CVD a large variety of systems that must exhibit economical ways to produce high-quality films in terms of, e.g., uniformity, purity, electrical ...

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