8.4. Processing of Silicon Dioxides
The preceding sections have concentrated on the various aspects of the growth and deposition of silicon dioxides. The present section touches on topics of oxide processing, cleaning and etching.
8.4.1. Cleaning
Usually in microelectronics fabrication the wafer-cleaning steps are performed before the high-temperature, layer deposition and/or lithography process steps. The intention of the cleaning is to remove particles and photoresistant residues, metallic impurities, and organic contamination.
Usually, in the course of growing fresh oxides or depositing oxide layers on nonmetallic films (oxide, polysilicon, silicon nitride), a so-called standard clean (SC) sequence is employed. This consists of three steps ...
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