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Handbook of Silicon Based MEMS Materials and Technologies by Teruaki Motooka, Ari Lehto, Markku Tilli, Veikko Lindroos

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26.3. ALD Processes

26.3.1. General Requirements for the Reactants

In ALD growth, reactants are transported through the gas phase to the growing film. The reactants can be gases, liquids, as well as solid materials at room temperature, but they need to possess a sufficiently high vapor pressure at the temperature of their vaporization to enable transportation through the gas phase. The reactants must not decompose thermally, neither at the vaporization temperature nor at the ALD growth temperature. Ideally, the gaseous reaction by-products formed from the reactants during the ALD film growth should not interact with the surface after desorption, and they should also be noncorrosive towards the substrate material and the reactor materials. In ...

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