Semiconductor material development for terahertz applications
M. Missous, The University of Manchester, UK
Abstract:
Analysis of the performance characteristics of low-temperature-grown GaAs (LT-GaAs) and detailed characterisation of undoped and Be-doped LT-In0.53Ga0.47As-In0 52Al0.48 As structures is undertaken in order to correlate the structural point defect behaviour with obtained electrical, optical and THz properties. By a judicious combination of doping and annealing temperatures, materials with sub-picosecond lifetimes and resistivity of ~ 1 × 107 ohm/square have been obtained on LT-In0.53Ga0.47As-In0.52Al0.48As with THz performances that include sub-picosecond recombination times and over 50 dB THz power spectrum dynamic range. ...
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