Operational principles of silicon image sensors
D. Durini, Forschungszentrum Jülich GmbH, Germany and formerly Fraunhofer Institute for Microelectronic Circuits and Systems, Germany
D. Arutinov, Fraunhofer Institute for Microelectronic Circuits and Systems, Germany
Abstract:
This chapter discusses in detail the physics behind the different silicon based photodetector technologies. It analyses the challenges and perspectives of silicon based photosensors with a brief overview of hybrid and 3D sensor technology.
Key words
silicon based phototransduction; active pixel architectures; complementary metal-oxide-semiconductor (CMOS) photosensors; charge coupled device (CCD); silicon imaging; signal-to-noise ratio (SNR); hybrid and 3D detector technology ...
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