Integrated Circuit Design for Radiation Environments

4 Radiation‐Induced Single Events

4.1 Introduction – Single‐Events Effects (SEE)

This chapter discusses both nondestructive and destructive single‐event effects (SEEs) [1–75]. Nondestructive events can change the state of a semiconductor device, or circuit but do not lead to a functional failure. Nondestructive events can be classified as the following (Figure 4.1):

• Single‐event upsets (SEUs) [1]
• Multiple‐bit upsets (MBUs)
• Single‐event functional interrupts (SEFIs) [2]
• Single‐event transients (SETs) [4,5]
• Single‐event disturb (SED) [4,5]

Figure 4.1 Nondestructive single‐event effects.

Destructive SEEs can change the state of a semiconductor device, or circuit, or system and does lead to a functional failure. Destructive events can be classified as the following (Figure 4.2):

• Single‐event snapback (SESB) [1]
• Single‐event latchup (SEL) [76–83]
• Single‐event gate rupture (SEGR) [6–9]
• Single‐event burnout (SEB) [10–15]

Figure 4.2 Destructive single‐event effects.

4.1.1 Single‐Event Upsets (SEU)

SEU is an upset of a device, circuit, or system where the state is changed in a nondestructive process [1]. The most commonly discussed SEUs are associated with memory circuits. In more recent times, SEUs are a concern in latch networks in logic circuitry. ...