Integrated Devices for Artificial Intelligence and VLSI

3Comparison of Different TFETs: An Overview

Rama Satya¹, Nageswara Rao^1,2 and K. Srinivasa Rao¹*

¹MEMS Research Center, Department of ECE, Koneru Lakshmaiah Educational Foundation (Deemed to be University), Green Fields, Vaddeswaram, Guntur, Andhra Pradesh, India

²Department of ECE, B V C Engineering College, Odalarevu, Andhra Pradesh, India

Abstract

The standard MOSFET used in modern IC technology is expected to be replaced by new tunnel field effect transistor (TFET), which is seen to be the utmost viable contender. Researchers have been very interested in it as a result of its capacity to attain a steep sub-threshold slope, a stronger resilience to short channel effect’s, and a reduced standby power dissipation. The current transport technique, band to band tunneling (BTBT), causes TFET’s two main bottlenecks, lower Ion current and ambipolar conductivity, despite the fact that it promises several benefits over other MOSFET competitors. This article provides a thorough overview of the many methods researchers have proposed to increase the ON-State current and subthreshold swing in Tunnel FETs.

Keywords: Tunnel field-effect-transistor, band to band tunneling, sub-threshold slope, ambipolar current, drain current, surface potential

3.1 Introduction

There has been constant development in CMOS technology afterward presentation of initial Field-Effect Transistor in 1960 and CMOS (Complementary Metal Oxide Semiconductor) disposition in 1963. The Moore’s law-inspired exponential ...