Integrated Microsystems

23Patterned Sapphire and Chip Separation Technique in InGaN-Based LEDs

Jae-Hoon Lee

CONTENTS

1. 23.1 Introduction
   1. 23.1.1 Evolution of III–Nitride Materials
   2. 23.1.2 Important Properties of III–Nitride Materials
2. 23.2 GaN Film on Patterned Sapphire Substrate
3. 23.3 Characteristics of InGaN/GaN Films after Sapphire Lapping and Polishing
4. 23.4 Traditional Diamond Tip Scribing in InGaN-Based LEDs
5. 23.5 Laser Scribing in InGaN-Based LED
   1. 23.5.1 Theory of Laser
   2. 23.5.2 Nanosecond Laser Scribing
   3. 23.5.3 Femtosecond Laser Scribing
   4. 23.5.4 Optical and Electrical Characteristics
6. 23.6 Conclusions
7. Acknowledgments
8. References

23.1 Introduction

Group III–nitride semiconductors and their ternary solid solutions are very promising as the candidates for both short-wavelength ...