Integrated Power Devices and TCAD Simulation

9 Integrated Power Semiconductor Devices with 3D TCAD Simulations

This chapter provides a few 3D technology computer-aided design (TCAD) simulation examples for power semiconductor devices. Since the structure of power devices is getting more and more complex, traditional 2D simulations often fail to reveal important three-dimensional effects. Typical device examples with pronounced three-dimensional effects include Super Junction LDMOS, segmented anode lateral insulated gate bipolar transistor (LIGBT), and complicated interconnect structures.

9.1 3D Device Layout Effect

For power devices design, one of the most important considerations is the breakdown voltage. To enhance this value, we need to know how the electric field is distributed in ...