Book description
An invaluable introduction to nanomaterials and their applications
Offering the unique approach of applying traditional physics concepts to explain new phenomena, Introduction to Nanomaterials and Devices provides readers with a solid foundation on the subject of quantum mechanics and introduces the basic concepts of nanomaterials and the devices fabricated from them. Discussion begins with the basis for understanding the basic properties of semiconductors and gradually evolves to cover quantum structures—including single, multiple, and quantum wells—and the properties of nanomaterial systems, such as quantum wires and dots.
Written by a renowned specialist in the field, this book features:
An introduction to the growth of bulk semiconductors, semiconductor thin films, and semiconductor nanomaterials
Information on the application of quantum mechanics to nanomaterial structures and quantum transport
Extensive coverage of Maxwell-Boltzmann, Fermi-Dirac, and Bose-Einstein stastistics
An in-depth look at optical, electrical, and transport properties
Coverage of electronic devices and optoelectronic devices
Calculations of the energy levels in periodic potentials, quantum wells, and quantum dots
Introduction to Nanomaterials and Devices provides essential groundwork for understanding the behavior and growth of nanomaterials and is a valuable resource for students and practitioners in a field full of possibilities for innovation and invention.
Table of contents
- Cover
- Title Page
- Copyright
- Dedication Page
- Preface
- Fundamental Constants
- Chapter 1: Growth of Bulk, Thin Films, and Nanomaterials
-
Chapter 2: Application of Quantum Mechanics to Nanomaterial Structures
- 2.1 Introduction
- 2.2 The de Broglie Relation
- 2.3 Wave Functions and Schrödinger Equation
- 2.4 Dirac Notation
- 2.5 Variational Method
- 2.6 Stationary States of a Particle in a Potential Step
- 2.7 Potential Barrier with a Finite Height
- 2.8 Potential Well with an Infinite Depth
- 2.9 Finite Depth Potential Well
- 2.10 Unbound Motion of a Particle (E > V0) in a Potential Well With a Finite Depth
- 2.11 Triangular Potential Well
- 2.12 Delta Function Potentials
- 2.13 Transmission in Finite Double Barrier Potential Wells
- 2.14 Envelope Function Approximation
- 2.15 Periodic Potential
- 2.16 Effective Mass
- Bibliography
- Chapter 3: Density of States in Semiconductor Materials
-
Chapter 4: Optical Properties
- 4.1 Fundamentals
- 4.2 Lorentz and Drude Models
- 4.3 The Optical Absorption Coefficient of the Interband Transition in Direct Band Gap Semiconductors
- 4.4 The Optical Absorption Coefficient of the Interband Transition in Indirect Band Gap Semiconductors
- 4.5 The Optical Absorption Coefficient of the Interband Transition in Quantum Wells
- 4.6 The Optical Absorption Coefficient of the Interband Transition in Type II Superlattices
- 4.7 The Optical Absorption Coefficient of the Intersubband Transition in Multiple Quantum Wells
- 4.8 The Optical Absorption Coefficient of the Intersubband Transition in GaN/AlGaN Multiple Quantum Wells
- 4.9 Electronic Transitions in Multiple Quantum Dots
- 4.10 Selection Rules
- 4.11 Excitons
- 4.12 Cyclotron Resonance
- 4.13 Photoluminescence
- 4.14 Basic Concepts of Photoconductivity
- Bibliography
-
Chapter 5: Electrical and Transport Properties
- 5.1 Introduction
- 5.2 The Hall Effect
- 5.3 Quantum Hall and Shubnikov- Haas Effects
- 5.4 Charge Carrier Transport in Bulk Semiconductors
- 5.5 Boltzmann Transport Equation
- 5.6 Derivation of Transport Coefficients Using the Boltzmann Transport Equation
- 5.7 Scattering Mechanisms in Bulk Semiconductors
- 5.8 Scattering in a Two-Dimensional Electron Gas
- 5.9 Coherence and Mesoscopic Systems
- Bibliography
-
Chapter 6: Electronic Devices
- 6.1 Introduction
- 6.2 Schottky Diode
- 6.3 Metal–Semiconductor Field-Effect Transistors (MESFETs)
- 6.4 Junction Field-Effect Transistor (JFET)
- 6.5 Heterojunction Field-Effect Transistors (HFETs)
- 6.6 GaN/AlGaN Heterojunction Field-Effect Transistors (HFETs)
- 6.7 Heterojunction Bipolar Transistors (HBTs)
- 6.8 Tunneling Electron Transistors
- 6.9 The – Junction Tunneling Diode
- 6.10 Resonant Tunneling Diodes
- 6.11 Coulomb Blockade
- 6.12 Single-Electron Transistor
- Bibliography
- Chapter 7: Optoelectronic Devices
- Appendix A: Derivation of Heisenberg Uncertainty Principle
- Appendix B: Perturbation
- Appendix C: Angular Momentum
- Appendix D: Wentzel-Kramers-Brillouin (WKB) Approximation
- Appendix E: Parabolic Potential Well
- Appendix F: Transmission Coefficient in Superlattices
- Appendix G: Lattice Vibrations and Phonons
- Appendix H: Tunneling Through Potential Barriers
- Index
Product information
- Title: Introduction to Nanomaterials and Devices
- Author(s):
- Release date: December 2011
- Publisher(s): Wiley-Interscience
- ISBN: 9780470927076
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