BJT High-Gain Amplifiers and Current Mirrors
Abstract
In this chapter, we discuss a more detailed incremental model of the bipolar transistor that takes into account the base-width modulation effect. The resulting resistive elements resulting from base-width modulation have significant design impact on high-gain amplifiers, emitter-followers, and current mirrors.
Keywords
Base-width modulation; Early effect; h-parameters; high-gain amplifier; emitter follower; current mirror; emitter degeneration; Wilson current mirror; Widlar current mirror; voltage compliance; open-circuit time constants
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