Large-Signal Switching of Bipolar Transistors and MOSFETs
Abstract
In this chapter, we examine in detail large-signal switching of bipolar transistors and metal oxide–semiconductor field-effect transistors (MOSFETs). For bipolar junction transistors, a model used to estimate the switching speed, called the “charge control model”, is introduced. For MOSFETs, we focus on gate charge test data in order to estimate switching speed.
Keywords
Charge control model; switching; saturation; forward-active; reverse-active; saturation; speedup capacitor; depletion capacitance; diffusion capacitance; datasheet; MOSFET; gate charge; gate driver
“There is more to life than increasing its speed.”
—M. K. Gandhi
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