Electron beam (e-beam) lithography is a very high-resolution lithography technique that uses electron beams instead of UV light beams to impress the photoresist. The typical energy of electron beams used in e-beam lithography is 10–50 keV, so that the corresponding De Broglie wavelength is of the order of 50 Å, so small that any diffraction effect disappears. The e-beam resolution is limited by factors different from diffraction, like electrons scattering in the resist and electrons optics aberration. In any case, resolutions smaller than 10 nm can be attained by electron beam techniques. An example of the structure fabricated using electron beam lithography is shown in Figure 4.53. It is a ring optical resonator ...
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