The formation of nanocones on the surface of semiconductors by laser-induced self-assembly
A. Medvid’, Riga Technical University, Latvia and Institute of Semiconductor Physics of NAS Ukraine, Ukraine
Abstract:
A new laser method is elaborated for the formation of nanocones on the surface of such semiconductors as elementary semiconductors Si and Ge and semiconductor solid solutions – Si1−x Gex/Si and Cd1−x ZnxTe. Strong changes in the optical, mechanical and electrical properties of the semiconductors after irradiation by Nd:YAG laser are explained by the presence of the quantum confinement effect (QCE) in nanocones where radius is equal to or smaller than Bohr’s radius of electron, hole or exciton. The phenomena of ‘blue shift’ of ...
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