Microsystems for Bioelectronics

Substituting (A2.6) into (A2.5) we obtain the result for minimum travel time (3.55):

s ¼

L

a

H

s

H

(A2.7)

LIST OF SYMBOLS

Symbol Meaning

a Energy barrier width, tile size

a

H

Heisenberg distinguishability length

a

HB

Boltzmann-Heisenberg length

BIT Maximum binary throughput

C Capacitance

d Distance

e Electron charge, e ¼ 1.6  10

–19

C

E Energy

E

b

Energy barrier height

E

sw

Switching energy

f Frequency

F Force

F Fan-out

G Conductance

G

0

Quantum conductance, G

0

¼ 7.75  10

–5

A/V

h Planck’s constant, h ¼ 6.63  10

–34

J$s

Z Reduced Planck’s constant - ¼ h/2p ¼ 1.055  10

–34

J$s

I Current

k Number of tiles

k

B

Boltzmann constant, k

B

¼ 1.38  10

–23

J/K

L, l Length

m Mass

m

e

Electron mass, m

e

¼ 9.31  10

–31

kg

n Device packing density

n

i

Intrinsic carrier concentration in an undoped semiconductor (for

Si, n

i

¼ 1.45  10

10

cm

–3

)

N Number of binary switches

N



a

Concentration of ionized acceptor impurities in semiconductor

N

þ

d

Concentration of ionized donor impurities in semiconductor

N

e

Number of electrons

p Momentum

P Power

R Resistance

R

0

Quantum resistance, R

0

¼ 12.9 k

U

88 CHAPTER 3 Nanomorphic electronics