Chapter 13. Indium Antimonide (InSb) Nanowire-Based Photodetectors
Hongzhi Chen*, King Wai Chiu Lai*, Xuhui Sun, Ning Xi* and Meyya Meyyappan**
*Department of Electrical and Computer Engineering, Michigan State University, Michigan
Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, P.R. China
**Center for Nanotechnology, NASA Ames Research Center, California
Indium antimonide (InSb) is a direct band gap semiconductor compound with a band gap energy of 0.17 eV at room temperature, ...

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