Nano Optoelectronic Sensors and Devices

Chapter 13. Indium Antimonide (InSb) Nanowire-Based Photodetectors

Hongzhi Chen*, King Wai Chiu Lai*, Xuhui Sun^†, Ning Xi* and Meyya Meyyappan**

^*Department of Electrical and Computer Engineering, Michigan State University, Michigan

^†Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, P.R. China

^**Center for Nanotechnology, NASA Ames Research Center, California

Chapter Outline

13.1 Introduction 209

13.2 Growth of InSb Nanowires 214

13.3 Photodetectors Using Single InSb Nanowires 216

13.3.1 Symmetric InSb Nanowire Photodetectors 216

13.3.2 Asymmetric InSb Nanowire Photodetectors 218

13.4 Summary 223

References 223

Indium antimonide (InSb) is a direct band gap semiconductor compound with a band gap energy of 0.17 eV at room temperature, ...