Nano-Semiconductors

Nano-Semiconductors

by Krzysztof Iniewski
Released September 2018
Publisher(s): CRC Press
ISBN: 9781439848364

Read it now on the O’Reilly learning platform with a 10-day free trial.

O’Reilly members get unlimited access to books, live events, courses curated by job role, and more from O’Reilly and nearly 200 top publishers.

Start your free trial

Book description

With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies.

Taking into account the semiconductor industry’s transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics.

The book is divided into three parts that address:

  • Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices)
  • Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells)
  • Compound semiconductor devices and technology

This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.

Table of contents

  1. Front Cover
  2. Contents
  3. Preface
  4. Editor
  5. Contributors
  6. Part I: Semiconductor Materials
    1. Chapter 1: Electrical Propagation on Carbon Nanotubes: From Electrodynamics to Circuit Models (1/6)
    2. Chapter 1: Electrical Propagation on Carbon Nanotubes: From Electrodynamics to Circuit Models (2/6)
    3. Chapter 1: Electrical Propagation on Carbon Nanotubes: From Electrodynamics to Circuit Models (3/6)
    4. Chapter 1: Electrical Propagation on Carbon Nanotubes: From Electrodynamics to Circuit Models (4/6)
    5. Chapter 1: Electrical Propagation on Carbon Nanotubes: From Electrodynamics to Circuit Models (5/6)
    6. Chapter 1: Electrical Propagation on Carbon Nanotubes: From Electrodynamics to Circuit Models (6/6)
    7. Chapter 2: Monolithic Integration of Carbon Nanotubes and CMOS (1/8)
    8. Chapter 2: Monolithic Integration of Carbon Nanotubes and CMOS (2/8)
    9. Chapter 2: Monolithic Integration of Carbon Nanotubes and CMOS (3/8)
    10. Chapter 2: Monolithic Integration of Carbon Nanotubes and CMOS (4/8)
    11. Chapter 2: Monolithic Integration of Carbon Nanotubes and CMOS (5/8)
    12. Chapter 2: Monolithic Integration of Carbon Nanotubes and CMOS (6/8)
    13. Chapter 2: Monolithic Integration of Carbon Nanotubes and CMOS (7/8)
    14. Chapter 2: Monolithic Integration of Carbon Nanotubes and CMOS (8/8)
    15. Chapter 3: Facile, Scalable, and Ambient—Electrochemical Route for Titania Memristor Fabrication (1/4)
    16. Chapter 3: Facile, Scalable, and Ambient—Electrochemical Route for Titania Memristor Fabrication (2/4)
    17. Chapter 3: Facile, Scalable, and Ambient—Electrochemical Route for Titania Memristor Fabrication (3/4)
    18. Chapter 3: Facile, Scalable, and Ambient—Electrochemical Route for Titania Memristor Fabrication (4/4)
    19. Chapter 4: Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight Years (1/10)
    20. Chapter 4: Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight Years (2/10)
    21. Chapter 4: Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight Years (3/10)
    22. Chapter 4: Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight Years (4/10)
    23. Chapter 4: Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight Years (5/10)
    24. Chapter 4: Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight Years (6/10)
    25. Chapter 4: Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight Years (7/10)
    26. Chapter 4: Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight Years (8/10)
    27. Chapter 4: Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight Years (9/10)
    28. Chapter 4: Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight Years (10/10)
  7. Part II: Silicon Devices and Technology
    1. Chapter 5: SiGe BiCMOS Technology and Devices (1/4)
    2. Chapter 5: SiGe BiCMOS Technology and Devices (2/4)
    3. Chapter 5: SiGe BiCMOS Technology and Devices (3/4)
    4. Chapter 5: SiGe BiCMOS Technology and Devices (4/4)
    5. Chapter 6: Ultimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power Paradigm (1/4)
    6. Chapter 6: Ultimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power Paradigm (2/4)
    7. Chapter 6: Ultimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power Paradigm (3/4)
    8. Chapter 6: Ultimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power Paradigm (4/4)
    9. Chapter 7: Development of 3D Chip Integration Technology (1/10)
    10. Chapter 7: Development of 3D Chip Integration Technology (2/10)
    11. Chapter 7: Development of 3D Chip Integration Technology (3/10)
    12. Chapter 7: Development of 3D Chip Integration Technology (4/10)
    13. Chapter 7: Development of 3D Chip Integration Technology (5/10)
    14. Chapter 7: Development of 3D Chip Integration Technology (6/10)
    15. Chapter 7: Development of 3D Chip Integration Technology (7/10)
    16. Chapter 7: Development of 3D Chip Integration Technology (8/10)
    17. Chapter 7: Development of 3D Chip Integration Technology (9/10)
    18. Chapter 7: Development of 3D Chip Integration Technology (10/10)
    19. Chapter 8: Embedded Spin–Transfer–Torque MRAM (1/5)
    20. Chapter 8: Embedded Spin–Transfer–Torque MRAM (2/5)
    21. Chapter 8: Embedded Spin–Transfer–Torque MRAM (3/5)
    22. Chapter 8: Embedded Spin–Transfer–Torque MRAM (4/5)
    23. Chapter 8: Embedded Spin–Transfer–Torque MRAM (5/5)
    24. Chapter 9: Nonvolatile Memory Device: Resistive Random Access Memory (1/6)
    25. Chapter 9: Nonvolatile Memory Device: Resistive Random Access Memory (2/6)
    26. Chapter 9: Nonvolatile Memory Device: Resistive Random Access Memory (3/6)
    27. Chapter 9: Nonvolatile Memory Device: Resistive Random Access Memory (4/6)
    28. Chapter 9: Nonvolatile Memory Device: Resistive Random Access Memory (5/6)
    29. Chapter 9: Nonvolatile Memory Device: Resistive Random Access Memory (6/6)
    30. Chapter 10: DRAM Technology (1/7)
    31. Chapter 10: DRAM Technology (2/7)
    32. Chapter 10: DRAM Technology (3/7)
    33. Chapter 10: DRAM Technology (4/7)
    34. Chapter 10: DRAM Technology (5/7)
    35. Chapter 10: DRAM Technology (6/7)
    36. Chapter 10: DRAM Technology (7/7)
    37. Chapter 11: Monocrystalline Silicon Solar Cell Optimization and Modeling (1/5)
    38. Chapter 11: Monocrystalline Silicon Solar Cell Optimization and Modeling (2/5)
    39. Chapter 11: Monocrystalline Silicon Solar Cell Optimization and Modeling (3/5)
    40. Chapter 11: Monocrystalline Silicon Solar Cell Optimization and Modeling (4/5)
    41. Chapter 11: Monocrystalline Silicon Solar Cell Optimization and Modeling (5/5)
    42. Chapter 12: Radiation Effects on Silicon Devices (1/5)
    43. Chapter 12: Radiation Effects on Silicon Devices (2/5)
    44. Chapter 12: Radiation Effects on Silicon Devices (3/5)
    45. Chapter 12: Radiation Effects on Silicon Devices (4/5)
    46. Chapter 12: Radiation Effects on Silicon Devices (5/5)
  8. Part III: Compound Semiconductor Devices and Technology
    1. Chapter 13: GaN/InGaN Double Heterojunction Bipolar Transistors Using Direct-Growth Technology (1/4)
    2. Chapter 13: GaN/InGaN Double Heterojunction Bipolar Transistors Using Direct-Growth Technology (2/4)
    3. Chapter 13: GaN/InGaN Double Heterojunction Bipolar Transistors Using Direct-Growth Technology (3/4)
    4. Chapter 13: GaN/InGaN Double Heterojunction Bipolar Transistors Using Direct-Growth Technology (4/4)
    5. Chapter 14: GaN HEMTs Technology and Applications (1/8)
    6. Chapter 14: GaN HEMTs Technology and Applications (2/8)
    7. Chapter 14: GaN HEMTs Technology and Applications (3/8)
    8. Chapter 14: GaN HEMTs Technology and Applications (4/8)
    9. Chapter 14: GaN HEMTs Technology and Applications (5/8)
    10. Chapter 14: GaN HEMTs Technology and Applications (6/8)
    11. Chapter 14: GaN HEMTs Technology and Applications (7/8)
    12. Chapter 14: GaN HEMTs Technology and Applications (8/8)
    13. Chapter 15: Surface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors (1/10)
    14. Chapter 15: Surface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors (2/10)
    15. Chapter 15: Surface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors (3/10)
    16. Chapter 15: Surface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors (4/10)
    17. Chapter 15: Surface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors (5/10)
    18. Chapter 15: Surface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors (6/10)
    19. Chapter 15: Surface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors (7/10)
    20. Chapter 15: Surface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors (8/10)
    21. Chapter 15: Surface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors (9/10)
    22. Chapter 15: Surface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors (10/10)
    23. Chapter 16: GaN-Based HEMTs on Large-Diameter Si Substrate for Next Generation of High Power/High Temperature Devices (1/5)
    24. Chapter 16: GaN-Based HEMTs on Large-Diameter Si Substrate for Next Generation of High Power/High Temperature Devices (2/5)
    25. Chapter 16: GaN-Based HEMTs on Large-Diameter Si Substrate for Next Generation of High Power/High Temperature Devices (3/5)
    26. Chapter 16: GaN-Based HEMTs on Large-Diameter Si Substrate for Next Generation of High Power/High Temperature Devices (4/5)
    27. Chapter 16: GaN-Based HEMTs on Large-Diameter Si Substrate for Next Generation of High Power/High Temperature Devices (5/5)
    28. Chapter 17: GaAs HBT and Power Amplifier Design for Handset Terminals (1/8)
    29. Chapter 17: GaAs HBT and Power Amplifier Design for Handset Terminals (2/8)
    30. Chapter 17: GaAs HBT and Power Amplifier Design for Handset Terminals (3/8)
    31. Chapter 17: GaAs HBT and Power Amplifier Design for Handset Terminals (4/8)
    32. Chapter 17: GaAs HBT and Power Amplifier Design for Handset Terminals (5/8)
    33. Chapter 17: GaAs HBT and Power Amplifier Design for Handset Terminals (6/8)
    34. Chapter 17: GaAs HBT and Power Amplifier Design for Handset Terminals (7/8)
    35. Chapter 17: GaAs HBT and Power Amplifier Design for Handset Terminals (8/8)
    36. Chapter 18: Resonant Tunneling and Negative Differential Resistance in III-Nitrides (1/5)
    37. Chapter 18: Resonant Tunneling and Negative Differential Resistance in III-Nitrides (2/5)
    38. Chapter 18: Resonant Tunneling and Negative Differential Resistance in III-Nitrides (3/5)
    39. Chapter 18: Resonant Tunneling and Negative Differential Resistance in III-Nitrides (4/5)
    40. Chapter 18: Resonant Tunneling and Negative Differential Resistance in III-Nitrides (5/5)
    41. Chapter 19: New Frontiers in Intersubband Optoelectronics Using III-Nitride Semiconductors (1/5)
    42. Chapter 19: New Frontiers in Intersubband Optoelectronics Using III-Nitride Semiconductors (2/5)
    43. Chapter 19: New Frontiers in Intersubband Optoelectronics Using III-Nitride Semiconductors (3/5)
    44. Chapter 19: New Frontiers in Intersubband Optoelectronics Using III-Nitride Semiconductors (4/5)
    45. Chapter 19: New Frontiers in Intersubband Optoelectronics Using III-Nitride Semiconductors (5/5)

Product information

  • Title: Nano-Semiconductors
  • Author(s): Krzysztof Iniewski
  • Release date: September 2018
  • Publisher(s): CRC Press
  • ISBN: 9781439848364