5

Study of Lanthanum Incorporated HfO2 Nanoscale Film Deposited as an MOS Device Structure Using a Dense Plasma Focus Device

A. Srivastava and Y. Malhotra

CONTENTS

5.1    Introduction

5.2    Experimental Details

5.3    Results

5.4    Conclusion

Acknowledgments

References

5.1    INTRODUCTION

Scaling of a field effect transistor (FET) has been the major driving force behind the continuous improvements of the silicon-based semiconductor chips for achieving higher packaging density, higher speed, and lower power consumption/dissipation. With the mass scale production technology node reaching 45 nm and below, there was an urgent requirement of oxide thickness of less than 1.2 nm. Such an ultra-thin gate oxide led to direct tunneling resulting ...

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