14

High-Resistive Tunnel Junctions for Room-Temperature-Operating Single-Electron Transistors Fabricated Using Chemical Oxidation of Tungsten Nanoparticles

P. Santosh Kumar Karre, Daw Don Cheam, Manoranjan Acharya and Paul L. Bergstrom

CONTENTS

14.1  Introduction

14.2  Focused Ion Beam-Based Device Fabrication

14.3  Results and Discussion

14.4  SET as Gas Sensor

14.5  Conclusions

Acknowledgment

References

14.1  INTRODUCTION

Single-electron transistor (SET) devices are of immense interest because of their potential for lowpower operation and high integration density. The basic building blocks of a SET device are tunnel junctions with very small capacitance that are connected in series with a central conducting island. Charge conduction occurs ...

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