Nanoelectronic Device Applications Handbook

57	Impact of Phonon Scattering in an Si GAA Nanowire FET with a Single Donor in the Channel Antonio Martinez, Manuel Aldegunde and Karol Kalna

CONTENTS

57.1  Introduction

57.2  Nonequilibrium Green’s Function Model.

57.3  Electron–Electron Interaction Model beyond the Hartree Approximation

57.4  Simulated Device

57.5  Effect of Single Dopant on Performance of NFET

57.6  Conclusions

Acknowledgement

References

57.1  INTRODUCTION

Nanowire field effect transistors (NFETs), FinFETs, and other 3D architectures are progressively replacing the bulk metal-oxide semiconductor field-effect transistor (MOSFET) architecture in a complementary metal-oxide semiconductor (CMOS) Si technology. This process has been started by Intel’s introduction of TriGate ...