Nanoelectronic Device Applications Handbook

59	Characterization of Gate-All-Around Si-Nanowire Field-Effect Transistor Extraction of Series Resistance and Capacitance–Voltage Behavior
Yoon-Ha Jeong, Sang-Hyun Lee, Ye-Ram Kim, Rock-Hyun Baek, Dong-Won Kim, Jeong-Soo Lee and Dae Mann Kim

CONTENTS

59.1  Introduction

59.2  Extraction and Characterization of R_SD in NWFET

59.2.1  Extraction Procedure of R_SD in NWFET.

59.2.2  Modeling and Comparison Result of the R_SD Extracting Procedure in NWFET

59.3  Investigation on the C–V Characteristics and Effect of the Bottom Parasitic Transistor

59.3.1  Device Structure and C–V Measurement

59.3.2  Gate Signal Response of the Intrinsic Si Nanowire Channel

59.3.3  Effect of the SiGe Layer and Bottom Parasitic Transistor in the Si Substrate on ...