Get Nanoelectronic Device Applications Handbook now with O’Reilly online learning.
O’Reilly members experience live online training, plus books, videos, and digital content from 200+ publishers.
Characterization of Gate-All-Around Si-Nanowire Field-Effect Transistor
Extraction of Series Resistance and Capacitance–Voltage Behavior
Yoon-Ha Jeong, Sang-Hyun Lee, Ye-Ram Kim, Rock-Hyun Baek, Dong-Won Kim, Jeong-Soo Lee and Dae Mann Kim
59.2 Extraction and Characterization of RSD in NWFET
59.2.1 Extraction Procedure of RSD in NWFET.
59.2.2 Modeling and Comparison Result of the RSD Extracting Procedure in NWFET
59.3 Investigation on the C–V Characteristics and Effect of the Bottom Parasitic Transistor
59.3.1 Device Structure and C–V Measurement
59.3.2 Gate Signal Response of the Intrinsic Si Nanowire Channel
59.3.3 Effect of the SiGe Layer and Bottom Parasitic Transistor in the Si Substrate on ...